Bartolf, Holger: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Development of a 60 $\mu{\rm m}$ Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures

Bartolf, Holger, Mihaila, Andrei, Nistor, Iulian, Jurisch, Michael, Leibold, Bernd, Zimmermann, Martin

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2013

Language:

english

File:

PDF, 16.81 MB

english, 2013

2

Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications

Bartolf, Holger

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 2.04 MB

english, 2015

3

Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging

Rossmann, H.R., Gysin, Urs, Bubendorf, Alexander, Glatzel, Thilo, Reshanov, S.A., Zhang, Andy, Schöner, Adolf, Jung, T.A., Meyer, Ernst, Bartolf, Holger

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 474 KB

english, 2016

4

Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

Bartolf, Holger, Sundaramoorthy, Vinoth, Mihaila, Andrei, Berthou, Maxime, Godignon, Philippe, Millán, José

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 1.53 MB

english, 2014

5

Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers

Rossmann, H.R., Gysin, Urs, Bubendorf, Alexander, Glatzel, Thilo, Reshanov, Sergey, Schöner, Adolf, Jung, T.A., Meyer, Ernst, Bartolf, Holger

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1.24 MB

english, 2015

6

Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer

Mikhaylov, A.I., Afanasyev, Alexey V., Luchinin, Victor V., Reshanov, S.A., Schöner, Adolf, Knoll, Lars, Minamisawa, Renato Amaral, Alfieri, Giovanni, Bartolf, Holger

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 453 KB

english, 2015

7

Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces

Mikhaylov, A.I., Afanasyev, Alexey V., Luchinin, V.V., Reshanov, S.A., Schöner, Adolf, Knoll, Lars, Minamisawa, Renato Amaral, Alfieri, Giovanni, Bartolf, Holger

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 465 KB

english, 2015

8

Fluctuation Mechanisms in Superconductors || Concluding Remarks and Recent Nanowire Developments

Bartolf, Holger

Year:

2016

Language:

english

File:

PDF, 347 KB

english, 2016

9

Fluctuation Mechanisms in Superconductors || Fluctuation Mechanisms in Superconductors

Bartolf, Holger

Year:

2016

Language:

english

File:

PDF, 252 KB

english, 2016

10

Fluctuation Mechanisms in Superconductors ||

Bartolf, Holger

Year:

2016

Language:

english

File:

PDF, 8.30 MB

english, 2016

11

Fluctuation Mechanisms in Superconductors || Time-Resolved Photon- and Fluctuation Detection

Bartolf, Holger

Year:

2016

Language:

english

File:

PDF, 901 KB

english, 2016

12

Fluctuation Mechanisms in Superconductors || Proof of Principle of the Above Described Approach

Bartolf, Holger

Year:

2016

Language:

english

File:

PDF, 450 KB

english, 2016

13

Fluctuation Mechanisms in Superconductors || Device Manufacturing

Bartolf, Holger

Year:

2016

Language:

english

File:

PDF, 578 KB

english, 2016

14

High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere

Mikhaylov, Aleksey I., Reshanov, S.A., Schöner, Adolf, Afanasyev, Alexey V., Luchinin, Victor V., Knoll, Lars, Minamisawa, Renato A., Alfieri, Giovanni, Bartolf, Holger

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 399 KB

english, 2016

15

Optimization of 1700V 4H-SiC JBS Diode Parameters

Sharma, Rupendra Kumar, Hazdra, Pavel, Popelka, Stanislav, Mihaila, Andrei, Bartolf, Holger

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 318 KB

english, 2016

16

Tailoring the 4H-SiC/SiO 2 MOS-interface for SiC-based power switches

Mikhaylov, Aleksey I., Afanasyev, Alexey V., Luchinin, Victor V., Reshanov, Sergey A., Schöner, Adolf, Knoll, Lars, Minamisawa, Renato A., Alfieri, Giovanni, Bartolf, Holger

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.91 MB

english, 2016

17

On the Influence of Active Area Design on the Performance of SiC JBS Diodes

Mihaila, Andrei, Minamisawa, Renato Amaral, Knoll, Lars, Sundaramoorthy, Vinoth Kumar, Bianda, Enea, Bartolf, Holger, Alfieri, Giovanni, Rahimo, Munaf

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 2.03 MB

english, 2017

18

AIP Conference Proceedings [AIP THE THIRTEENTH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS—LTD13 - Stanford (California) (20–24 July 2009)] - NbN superconducting nanowire photon counters: magnetoconductivity and other detector properties

Engel, Andreas, Bartolf, Holger, Gómez, Luis, Semenov, Alexei, Il’in, Konstantin, Schilling, Andreas, Hübers, Heinz-Wilhelm, Siegel, Michael, Young, Betty, Cabrera, Blas, Miller, Aaron

Year:

2009

Language:

english

File:

PDF, 1.98 MB

english, 2009

19

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

Gysin, Urs, Glatzel, Thilo, Schmölzer, Thomas, Schöner, Adolf, Reshanov, Sergey, Bartolf, Holger, Meyer, Ernst

Journal:

Beilstein Journal of Nanotechnology

Year:

2015

Language:

english

File:

PDF, 5.46 MB

english, 2015